東京電機大学 · 先端科学技術研究科 · 教授

研究关键词sputter epitaxy・single-crystalline ZnO films・GaN thin films・InN thin films・AlN epitaxial layers・hydrogen gas sensors・ultraviolet sensors・radio-frequency magnetron sputtering

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• Preparation and properties of GaN:Al layers grown by radio-frequency magnetron sputter epitaxy
• Temperature dependence of InN film deposition by a r.f. plasma-assisted reactive ion-beam sputtering deposition technique
• Highlyc-axis oriented AlN layers grown onc-plane sapphire substrates by radio-frequency sputter epitaxy at 1080 °C
• Deposition of an InN thin film by a r. f. plasma-assisted reactive ion-beam sputtering deposition (R-IBSD) technique

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