名古屋大学 · 未来材料・システム研究所

研究关键词gan p-n junction・gan by photomulitiplication measurement・double-side-depleted shallow bevel termination・avalanche multiplication utilizing franz-keldysh・diodes by x-ray topography・diodes with negative beveled-mesa・mv/cm in gan-on-gan p-n

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• Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination2019 · IEEE ELECTRON DEVICE LETTERS 40 巻 ( 6 ) 頁： 941 - 944 2019年6月
• Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect2019 · 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 頁： 59 - 62 2019年
• Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination2019 · APPLIED PHYSICS LETTERS 115 巻 ( 14 ) 2019年9月
• Evaluation of dislocations under the electrodes of GaN pn diodes by X-ray topography2019 · Japanese Journal of Applied Physics Vol.58 巻 ( No.SC ) 頁： SCCD22-1 - SCCD22-4 2019年6月

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