東北大学 · 電気通信研究所 · 特任教授

研究关键词VCSELs・850 nm VCSELs・GaInAsP・InP lasers・strained quantum wells・semiconductor lasers

研究领域電子デバイス、電子機器

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• Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxyY. Inaba, T. Uchida, N. Yokouchi, T. Miyamoto, K. Mori, F. Koyama, K. Iga
• CBE growth of GaInAs/InP wafers for surface emitting lasersToshi K. Uchida, T. Uchida, K. Mise, N. Yokouchi, F. Koyama, K. Iga
• Beryllium Doping for Ga 0.47 In 0.53 As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)Takashi Uchida, Toshikazu Uchida, Noriyuki Yokouchi, Tomoyuki Miyamoto, Fumio Koyama Fumio Koyama, Kenichi Iga Kenichi Iga
• Ga x In 1-x /As y P 1-y -InP tensile-strained quantum wells for 1.3-μm low-threshold lasersN. Yokouchi, N. Yamanaka, N. Iwai, A. Kasukawa

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