Hokkaido University · Research Center for Quantum Integrated Electronics · 准教授

Research fieldsApplied materials・Crystal engineering・薄膜、表面界面物性・電子デバイス、電子機器・電気電子材料工学

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• Effects of 600 °C annealing prior to activation annealing of Mg-ion-implanted GaN on subsequently formed MOS interfaces2026 · Japanese Journal of Applied Physics, 65, 2, 026502-1, 026502-8, IOP Publishing, 2026年01月27日,
• Effects of 850 °C annealing on near-surface defects in Mg-ion-implanted GaN examined using MOS structures2025 · AIP Advances, 15, 8, 085007-1, 085007-7, AIP, 2025年08月01日,
• Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing2025 · Japanese Journal of Applied Physics, 64, 9, 090905-1, 090905-5, IOP Publishing, 2025年09月01日,
• Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance–voltage measurement2023 · Japanese Journal of Applied Physics, 62, 12, 126501-1, 126501-6, IOP, 2023年10月,

• 多数決論理にもとづく単電子集積デバイスの研究
• 窒化ガリウムナノ細線を用いた化学センサとその集積化センサチップへの展開
• 低誘電率・高絶縁耐力プラズマ堆積C_xF_y膜を用いたSF_6代替絶縁方式の開発
• III-V族半導体量子構造の表面準位の制御とその光デバイスへの応用

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