Hokkaido University · Research Center for Quantum Integrated Electronics

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• Improvement of the fabrication process for top-down GaN nanowires using contactless photo-assisted electrochemical etching2025 · Japanese Journal of Applied Physics, 64, 3, 03SP02, 03SP02, IOP Publishing, 2025年03月01日,
• Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques2023 · Applied Physics Express, 16, 9, 091002-1, 091002-2, IOP, 2023年09月,
• Fabrication of GaN nanowires containing n+-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment2021 · Applied Physics Express, IOP Publishing, 2021年10月06日,
• Electrical properties of nanometer-sized Schottky contacts for gate control of III-V single electron devices and quantum devices2021 · JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40, 3B, 2021, 2025, 2001年03月,

• 超ワイドギャップAlN系半導体を用いたパワートランジスタの開発
• 選択的半導体結晶成長法による量子集積回路作製プロセスの研究開発
• 選択成長によるフォトニック結晶の作製と応用に関する研究
• GaNの光電気化学プロセス

• Official profile