Kumamoto University · Institute for Semiconductor and Digital Research and Education

Research keywordsAlGaN/GaN HEMT・Gated-Anode Diode・High-Efficiency Rectification・Microwave Wireless Power Transfer・Device Modeling

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• Exploring Design Guidelines of AlGaN/GaN Gated-Anode Diodes Toward High-Power, High-Efficiency Microwave Rectification2026 · IEEE TRANSACTIONS ON ELECTRON DEVICES
• Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis Toward Efficient Microwave Rectification2025 · IEEE TRANSACTIONS ON ELECTRON DEVICES
• AlGaN/GaN Dual-Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer2025 · ELECTRONICS LETTERS
• Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification2025 · IEEE Transactions on Electron Devices

• 高Al組成GaN-HEMTのドレイン電流伝導機構に関する基礎研究2024 · 科学研究費助成事業
• 半導体の持続的な進化を支えるGaN系半導体向けプロセス「イオン注入+局所アニール」技術に関する研究2013 · 産学が連携した研究開発成果の展開 研究成果展開事業 研究成果最適展開支援プログラム(A-STEP) 探索タイプ

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