Kwansei Gakuin University · Faculty of Engineering

Research keywords4H-SiC electronics・tight-binding models・high-temperature JFETs・MOS density of states・graphene carrier mobility・low-dimensional electron systems・effective mass components・SPICE modeling

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• Monte Carlo simulation of edge scattering effects on carrier mobility in turbostratic multilayer graphene論文
• タイトル：論文
• Influence of substrate acceptor concentration on the density of states in MOS structures論文
• （頁 07SP07）論文

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