Kyushu University · Graduate School of Mathematics for Innovation

Research keywordsSiC MOSFETs・power semiconductor devices・PiN diodes・SPICE modeling・high-voltage integrated circuits・wide-bandgap electronics・drain current modeling・electrification technologies

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• SiC MOSFET – Key device for future electrification –2021 · AWAD2021 2021年
• An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs2021 · IEEJ Trans on Electrical and Electronic Engineering 2021 16 583 - 591 2021年
• Development of an Accurate SPICE Model for a new 1.2-kV SiCMOSFET device2020 · PCIM Europe 2020 407 - 410 2020年 （ ISBN: 978-3-8007-5245-4 ）
• A Comparative Study of SPICE models for an SiC-MOSFET2019 · PCIM Europe 2019 1958 - 1962 2019年 （ ISBN: 978-3-8007-4938-6 ）

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