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• Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
• Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
• (Ultra)wide bandgap semiconductor heterostructures for electronics cooling
• Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN

• 高性能GaN系素子作製に向けたハライド気相成長技術の確立
• p型GaN基板の実現に向けたHVPE成長技術の研究開発
• 公益財団法人立松財団 2024年度一般研究助成

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