Nagoya University · Institute of Materials and Systems for Sustainability

Research keywordsAlN/GaN HEMTs・IMPATT diodes・polarization doping・GaN contact resistance・metal-organic vapor phase epitaxy・2DEG heterostructures

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• Characteristics of 2DEG generated at the heterointerface of an AlN/GaN structure grown on an AlN substrate using metal organic vapor phase epitaxy2025 · JOURNAL OF APPLIED PHYSICS 137 巻 ( 19 ) 2025年5月
• Low-Resistance and Current-Collapse-Free MOVPE-Grown Pseudomorphic AlN/GaN/AlN HEMTs on AlN substrates2025 · 2025 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEDM 2025年
• Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique2024 · APPLIED PHYSICS EXPRESS 17 巻 ( 3 ) 2024年3月
• 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W2024 · IEEE TRANSACTIONS ON ELECTRON DEVICES 71 巻 ( 3 ) 頁： 1408 - 1415 2024年3月

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