Nagoya University · Institute of Materials and Systems for Sustainability

Research keywordsGallium Nitride Power Devices・Vertical GaN Devices・p-n Junction Reliability・Gate Oxide Reliability・Radiation Defects・Leakage Current

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• Reliability issues of gate oxides and p-n junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited)2023 · 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2023-March 巻 2023年
• Effects of proton irradiation-induced point defects on Shockley-Read-Hall recombination lifetimes in homoepitaxial GaN p-n junctions2023 · APPLIED PHYSICS LETTERS 122 巻 ( 11 ) 2023年3月
• Recent development of vertical GaN power devices2022 · JSAP Annual Meetings Extended Abstracts 2022.1 巻 ( 0 ) 頁： 2423 - 2423 2022年2月
• Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress2022 · SCIENTIFIC REPORTS 12 巻 ( 1 ) 頁： 1458 2022年1月

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