Nagoya University · Institute for Advanced Study · 特任助教

Research keywordsIII-nitride semiconductors・InGaN・p-GaN・AlN substrates・Mg intercalation・ohmic contacts・Schottky diodes・HVPE homoepitaxy・fin-channel FET

This is a public-data preview. Personalized fit, contact angles, and saved workflows require sign-in.

• Study of beryllium acceptor states in aluminum nitride via cathodoluminescence analysis2026 · Applied Physics Letters 128 巻 ( 3 ) 2026年1月
• A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films2025 · Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers 64 巻 ( 12 ) 2025年12月
• (Ultra)wide bandgap semiconductor heterostructures for electronics cooling2024 · Applied Physics Reviews 11 巻 ( 4 ) 2024年12月
• Observation of 2D-magnesium-intercalated gallium nitride superlattices2024 · Nature 631 巻 ( 8019 ) 頁： 67 - 72 2024年6月

• 絶縁窒化アルミニウムのp型伝導機構発現の解明とpチャネル電界効果トランジスタ応用

• Official profile