Nagoya Institute of Technology · Faculty of Engineering · 准教授

Research keywords窒化物半導体・電子デバイス・Effects・of・pre・deposition・annealing

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• Effects of pre-deposition annealing prior to gate insulator deposition in planar AlGaN/GaN MIS-HEMT with a thin AlGaN barrier layer2026 · Applied Physics Letters. 128 , 10 , 103504. 研究成果 : ジャーナルへの寄稿 › 記事 › 査読 Annealing 100% Electron Mobility 100% Transistor 100% Barrier Layer 100% Dielectric Material 66%
• Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures2025 · Applied Physics Letters. 127 , 25 , 252105. 研究成果 : ジャーナルへの寄稿 › 記事 › 査読 Gas Density 100% Heterostructures 100% Surface State 100% Surface (Surface Science) 100% Heterojunction 100% 1 リンクは新しいタブで開きます 被引用数 (Scopus)
• Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas2025 · Applied Physics Letters. 126 , 23 , 232103. 研究成果 : ジャーナルへの寄稿 › 記事 › 査読 Sheet Resistance 100% Metal Deposition 50% 3 リンクは新しいタブで開きます 被引用数 (Scopus)
• A simulation study of vertical Ga 2 O 3 Schottky barrier diodes using field plate termination2024 · Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 63 , 2 , 02SP66. 研究成果 : ジャーナルへの寄稿 › 記事 › 査読

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