Nagaoka University of Technology · Unclassified · 准教授

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• Surface Treatment for GaN Substrate -Comparison of Chemical Mechanical Polishing and Inductively Coupled Plasma Dry Etching-
• Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing
• III-Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation
• Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

• Official profile