Osaka University · Faculty of Engineering / Graduate School of Engineering · 助教

Research keywordsSilicon Carbide Electronics・4H-SiC Devices・MOS Inversion Layers・Schottky Barrier Diodes・Quantum Tunneling・Electronic Band Structure

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• Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states2025 · Japanese Journal of Applied Physics, Letter Vol. 64 2025年8月1日 研究論文（学術雑誌）
• Impact of interface structure on electronic states in 4H-SiC inversion layer2025 · Japanese Journal of Applied Physics Vol. 64 2025年1月1日 研究論文（学術雑誌）
• Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential2024 · Japanese Journal of Applied Physics Vol. 63 No. 3 2024年3月1日 研究論文（学術雑誌）
• Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer2024 · Japanese Journal of Applied Physics Vol. 63 2024年2月29日 研究論文（学術雑誌）

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