Saga University · Faculty of Science and Engineering / Graduate School of Science and Engineering

Research keywords半導体デバイス、パワーエレクトロニクス、ダイヤモンド、ワイドギャップ半導体・電気電子・機械・材料工学・Diamond・Doping・Optoelectronics

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• 4067 h of Long-Period Continuous Operation of Diamond MOSFETs2026 · IEEE Transactions on Electron Devices
• High off-state voltage (4266 V) diamond metal oxide semiconductor field effect transistors2025 · Journal of Vacuum Science & Technology B
• High power gain cut-off frequency (f MAX )>120 GHz of a 157-nm T-shaped gated diamond MOSFET with NO 2 p-type doping2025 · Japanese Journal of Applied Physics
• (100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography2025 · Journal of Applied Physics

• サファイア、SiC基板上ダイヤモンドヘテロエピタキシャル成長とMOSFETへの応用2025 · 科学研究費助成事業
• Research on Interface Properties and Hole Carrier Transport of High-power Diamond MOSFETs2025 · 科学研究費助成事業
• 結晶格子の異なる基板上のインチ径ダイヤモンドのヘテロエピタキシャル成長機構の学理2022 · 科学研究費助成事業

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