Tohoku University · Center for Innovative Integrated Electronic Systems

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• First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxideHiroyuki Kageshima, Yuji Yajima, Kenji Shiraishi, Tetsuo Endoh
• First principles studies on In-related nitride semiconductorsTeruaki Obata, Jun-ichi Iwata, Kenji Shiraishi, Atsushi Oshiyama
• Band Structures of Wurtzite InN and Ga1-xInxN by All-Electron $GW$ CalculationUsuda Manabu, Hamada Noriaki, Shiraishi Kenji, Oshiyama Atsushi
• First principles study of arsenic incorporation on a GaAs (001) surface during MBE growthK Shiraishi, T Ito

• 縦型BC-MOSFETのデバイス中の伝導現象の理論遠藤哲郎、白石賢二、伊藤公平
• 蛋白質ナノチューブの第一原理電子論武田 京三郎, 白石 賢二, 三原 久和
• エピタキシャル成長の量子論と構造のダイナミクス西永 頌, 白石 賢二, 伊藤 智徳, 大野 英男, 中山 弘, 一宮 彪彦
• 計算量子科学によるナノアーキテクチャーの構築押山淳 白石賢二

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