Meisei University · Faculty of Science and Engineering

Research keywordsGaN epitaxy・AlN GaN heterostructures・InN GaN photoluminescence・flow-rate modulation epitaxy・Landau level quantization・nitride semiconductors

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• Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience2024
• Landau level quantization with gate tuning in an AlN/GaN single heterostructure2018 · Japanese Journal of Applied Physics
• N-face (000-1) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy2018 · Applied Physics Express
• Surface morphology control of nonpolar m-plane AlN homoepitaxial layers by flow-rate modulation epitaxy2017

• 窒化物半導体常圧液相成長の研究2022
• 2019/04～ ワイドギャップ半導体の量子構造・物性の研究 個人研究2019 · 研究課題・受託研究・科研費
• 窒化物半導体ステップフリー面を利用した新規分子層エピタキシ2016
• InGaNの非混和性を積極的に利用したDERI法による転位の不活性化2014

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