Toyama Prefectural University · Faculty of Engineering · 教授

Research keywordsワイドバンドギャップ半導体・デバイスシミュレーション・SiC MOS界面・SiC・SiCパワーデバイス

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• Characterization of traps in SiC/SiO
• Simulation, fabrication and characterization of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs)
• Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge
• Measurement of Hall mobility in 4H-SiC for improvement of the accuracy of the mobility model in device simulation

• ホウ素固体の電子構造および物性
• SiC MOS界面の反転層移動度の散乱機構の研究
• SiC-MOS界面移動度の主劣化要因となる散乱体の物理的実体の解明
• SiC-MOSFET界面物性と信頼性劣化機構解明による次世代デバイス設計基盤技術の確立

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