Tokyo University of Science · Faculty of Advanced Engineering

Research keywords結晶工学・結晶成長、窒化物半導体、窒化物強誘電体・窒化物半導体

Research fields窒化物半導体・金属材料物性

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• Polarity inversion of GaN from +c to −c polarity by metalorganic vapor phase epitaxy2025
• Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device2024
• Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures
• First-principles structural analysis of polarity inversion boundaries in GaN

• スパッタ法によるN極性GaN上へのScAlN薄膜のエピタキシャル成長と 強誘電性評価
• ScAlN/GaNヘテロ構造の応⼒・分極モデル構築とデバイス特性予測

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