The University of Tokyo · Research Center for Advanced Science and Technology

Research keywordssolar cell defect imaging・electroluminescence imaging・beta-gallium oxide devices・heterojunction diodes・deep-level transient spectroscopy・interface trap states・perovskite solar cells・distributed diode modeling

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• Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions
• Influence of Oxygen Partial Pressure on Sputtered NiOx Film Characteristics and Deep Interface Trap Density in NiOx/β-Ga2O3 Heterojunction Diodes
• Electrical properties of vertical Cu2O/β-Ga2O3 (001) p–n diodes
• Suppressing Light-Induced Phase Segregation via Dual Interface Modification for High-Performance and Stable Inverted CsPbIBr2 Perovskite Solar Cells

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