Nagoya University · Institute of Materials and Systems for Sustainability · 特任准教授

Research keywordsvan der Waals epitaxy・monolayer MoS2・GaN semiconductor structures・atomic resolution microscopy・oxide on GaN・wurtzite nitride alloys・semiconductor interfaces

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• Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics2026 · NATURE COMMUNICATIONS 17 巻 ( 1 ) 頁： 602 2026年1月
• Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy2025 · APPLIED PHYSICS LETTERS 127 巻 ( 25 ) 2025年12月
• Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability2025 · Device Research Conference Conference Digest Drc 2025年
• Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN2025 · JOURNAL OF APPLIED PHYSICS 137 巻 ( 5 ) 2025年2月

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