Nagoya University · Faculty of Engineering / Graduate School of Engineering · 助教

Research keywordsマイクロ波無線電力伝送・レクテナ・窒化ガリウム・高周波デバイス・Ⅲ族窒化物半導体

This is a public-data preview. Personalized fit, contact angles, and saved workflows require sign-in.

• Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification
• Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis Toward Efficient Microwave Rectification
• Exploring Design Guidelines of AlGaN/GaN Gated-Anode Diodes Toward High-Power, High-Efficiency Microwave Rectification

• Official profile