Nagoya University · Faculty of Engineering / Graduate School of Engineering · 特任教授

Research keywordsGaN HEMTs・field-plate engineering・normally-off GaN devices・gated-anode diodes・SiN passivation stress・leakage-current control・rectenna devices

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• Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer2021 · APPLIED PHYSICS LETTERS 118 巻 ( 7 ) 2021年2月
• Dynamic characteristics after bias stress of GaN HEMTs with field plate on free-standing GaN substrate2021 · ELECTRONICS LETTERS 57 巻 ( 15 ) 頁： 591 - 593 2021年7月
• Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors2021 · APPLIED PHYSICS EXPRESS 14 巻 ( 9 ) 2021年9月
• Electrical characteristics of gated-anode diodes based on normally-off GaN HEMT structures for rectenna applications2021 · ELECTRONICS LETTERS 57 巻 ( 21 ) 頁： 810 - 812 2021年10月

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