京都大学 · 工学部・工学研究科

研究关键词Mn-doped Y3Al5O12・single crystal scintillators・scintillator materials・luminescent materials・radiation detection・crystal growth

以下为公开数据预览。个性化匹配理由、联系角度和保存能力需要登录后使用。

• Optical anisotropy of (11 2¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substratesJournal of Applied Physics,
• Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum WellsIEICE Transactions on Electronics,
• Metal-Organic Vapor Phase Epitaxy of High-Quality GaN on Al-Pretreated Sapphire Substrates Without Using Low-Temperature Buffer LayersPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
• InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emittersApplied Physics Express,

• 官方个人主页