Kyoto University · Faculty of Engineering / Graduate School of Engineering

Research keywordsMn-doped Y3Al5O12・single crystal scintillators・scintillator materials・luminescent materials・radiation detection・crystal growth

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• Optical anisotropy of (11 2¯3) semipolar InGaN quantum wells homoepitaxially grown on GaN substratesJournal of Applied Physics,
• Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum WellsIEICE Transactions on Electronics,
• Metal-Organic Vapor Phase Epitaxy of High-Quality GaN on Al-Pretreated Sapphire Substrates Without Using Low-Temperature Buffer LayersPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
• InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emittersApplied Physics Express,

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